vs-gbpc.. series www.vishay.com vishay semiconductors revision: 08-apr-14 1 document number: 93575 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 single phase bridge (power modules), 25 a/35 a features ? universal, 3 way terminals: push-on, wrap around or solder ? high thermal conductivity package, electrically insulated case ? positive polarity symbol molded on the plastic case ? center hole fixing ? glass passivated diode chips ? excellent power/volume ratio ? nickel plated terminals sold erable using lead (pb)-free solder; solder alloy sn/ag/cu (sac305); solder temperature 260 c to 275 c ? wire lead version available ? ul e300359 approved ? designed and qualified for in dustrial and consumer level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description/applications a range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. they are intended for use in general purpose and instrumentation applications. electrical specifications note (1) see ordering information table at the end of datasheet product summary i o 25 a to 35 a v rrm 200 v to 1200 v package gbpc..a, gbpc..w circuit single phase bridge gbpc...a gbpc...w major ratings and characteristics symbol characteristics values gbpc25 values gbpc35 units i o 25 35 a t c 60 55 c i fsm 50 hz 400 475 a 60 hz 420 500 i 2 t 50 hz 790 1130 a 2 s 60 hz 725 1030 v rrm range 200 to 1200 v t j -55 to 150 c voltage ratings type number voltage code v rrm , maximum repetitive peak ac reverse voltage t j = t j maximum v v rsm , maximum non-repetitive peak ac reverse voltage t j = t j maximum v i rrm maximum at rated v rrm t j = t j maximum ma i rrm maximum dc reverse current at t j = 125 c a vs-gbpc25/35..a (1) ? vs-gbpc25/35..w 02 200 275 2 500 04 400 500 06 600 725 08 800 900 10 1000 1100 12 1200 1300
vs-gbpc.. series www.vishay.com vishay semiconductors revision: 08-apr-14 2 document number: 93575 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings characteristics fig. 2 - forward voltage drop characteristics forward conduction parameter symbol test conditions values gbpc25 values gbpc35 units maximum dc output current ? at case temperature i o resistive or inductive load 25 35 a capacitive load 20 28 60 55 c maximum peak, one-cycle ? non-repetitive forward current i fsm t = 10 ms no voltage ? reapplied initial t j = t j maximum 400 475 a t = 8.3 ms 420 500 t = 10 ms 100 % v rrm ? reapplied 335 400 t = 8.3 ms 350 420 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 790 1130 a 2 s t = 8.3 ms 725 1030 t = 10 ms 100 % v rrm ? reapplied 560 800 t = 8.3 ms 512 730 maximum i 2 ? t for fusing i 2 ? ti 2 t for time t x = i 2 ? t x ? t x ; 0.1 ? t x ? 10 ms, v rrm = 0 v 7.9 11.3 ka 2 ? s low level of threshold voltage v f(to)1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j maximum 0.76 0.77 v high level of threshold voltage v f(to)2 (i > ? x i f(av) ), t j maximum 0.89 0.92 low level forward slope resistance r t1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j maximum 8.2 4.852 m ? high level forward slope resistance r t2 (i > ? x i f(av) ), t j maximum 6.8 3.867 maximum forward voltage drop v fm t j = 25 c, i fm = i favg (arm) 1.1 1.1 v maximum dc reverse current i rrm t j = 25 c, per diode at v rrm 5.0 a rms isolation voltage base plate v ins f = 50 hz, t = 1 s 2700 v thermal and mechanical specifications parameter symbol test conditions values gbpc25 values gbpc35 units junction and storage temperature range t j , t stg -55 to 150 c maximum thermal resistance, ? junction to case per bridge r thjc dc operation 1.7 1.4 k/w maximuml thermal resistance, ? case to heatsink r thcs mounting surface, smooth, flat and greased 0.2 approximate weight 16 g mounting torque 10 % bridge to heatsink 2.0 n m (lbf in) maximum allowable case temperature (c) average forward current (a) 50 60 70 80 90 100 110 120 130 140 150 0 5 10 15 20 25 30 180 (sine) 180 (rect) gbpc25.. series instantaneous forward voltage (v) instantaneous forward current (a) 1 10 100 1000 0.5 1 1.5 2 2.5 t = 25 c j t = 150 c j gbpc25.. series
vs-gbpc.. series www.vishay.com vishay semiconductors revision: 08-apr-14 3 document number: 93575 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - total power loss characteristics fig. 4 - maximum non-re petitive surge current fig. 5 - maximum non-re petitive surge current fig. 6 - current ra tings characteristics fig. 7 - forward voltage drop characteristics average forward current (a) maximum allowable ambient temperature c maximum average forward power loss (w) 25 50 75 100 3 k/w 1 k/w r = 0.7 k/w - delta r thsa 2 k/w 0 10 20 30 40 50 0 5 10 15 20 25 180 (sine) 180 (rect) gbpc25.. series t = 150 c j number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) 100 150 2 00 2 50 300 350 4 00 110100 initial t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j gbpc25.. series pulse train duration (s) peak half sine wave forward current (a) 50 100 150 200 250 300 350 400 0.01 0.1 1 maximum non repetitive surge current initial t = 150 c no voltage reapplied rated v reapplied versus pulse train duration. rrm j gbpc25.. series average forward current (a) maximum allowable case temperature (c) 40 50 60 70 80 90 100 110 120 130 140 150 0 10203040 180 (sine) 180 (rect) gbpc35.. series instantaneous forward voltage (v) instantaneous forward current (a) 1 10 100 1000 0.511.522.53 t = 25 c j gbpc35.. series t = 150 c j
vs-gbpc.. series www.vishay.com vishay semiconductors revision: 08-apr-14 4 document number: 93575 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - total power loss characteristics fig. 9 - maximum non-re petitive surge current fig. 10 - maximum non-re petitive surge current fig. 11 - thermal impedance z thjc characteristic fig. 12 - thermal impedance z thjc characteristic maximum average forward power loss (w) average forward current (a) maximum allowable ambient temperature c 25 50 75 100 1 k/w 0.7 k/w 3 k/w 2 k/w r thsa = 0. 5 k/w - del ta r 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 180 (sine) 180 (rect) gbpc35.. series t = 150 c j peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 100 150 200 250 300 350 400 450 11010 0 gbpc35.. series at any rated load condition and with rated vrrm applied following surge. initial tj = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s) 100 150 200 250 300 350 400 450 500 0.01 0.1 1 maximum non repetitive surge current gbpc35.. series versus pulse train duration. initial tj = 150 c no voltage reapplied rated vrrm reapplied square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 gbpc25.. series steady state value r = 1.7 k/w (dc operation) thjc square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 gbpc35.. series steady state value r = 1.4 k/w (dc operation) thjc
vs-gbpc.. series www.vishay.com vishay semiconductors revision: 08-apr-14 5 document number: 93575 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95331 2 - circuit configuration: 1 - vishay semiconductors product 3 - current rating code 4 - voltage code x 100 = v rrm 5 - diode bridge rectifier: single phase bridge coding 25 = 25 a (average) 35 = 35 a (average) a = standard fast-on terminal w = wire lead device code 1 3 2 4 5 gbpc 35 vs- 12 a ac1 ac2 d1 d2 d3 d4 (+) (-)
document number: 95331 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-jul-08 1 gbpc outline dimensions vishay semiconductors dimensions for gbpc...a in millimeters dimensions for gbpc...w in millimeters 6.35 (4 x) 0.8 20 ? 2.4 7.7 28.6 18.1 28.6 14.3 ac1 ? 5.3 16.6 16.6 ac2 32/34 1.0 (4 x) 7.7 28.6 18.1 5.3 28.6 ? 5.3 12.2 11.4 ac1 18.1 ac2
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